Characteristics of three-junction electromechanical single electron transistor at zero temperatureWANG, Y; JIANG, J. F; CAI, Q. Y et al.Physica. E, low-dimentional systems and nanostructures. 2006, Vol 31, Num 1, pp 53-56, issn 1386-9477, 4 p.Article

Electron transport through the electromechanical quantum dots devicesWANG, Y; JIANG, J. F; CAI, Q. Y et al.Physica. E, low-dimentional systems and nanostructures. 2006, Vol 31, Num 2, pp 196-199, issn 1386-9477, 4 p.Article

Practical decoy state quantum key distribution with finite resourceTAN, Y. G; CAI, Q. Y.The European physical journal. D, Atomic, molecular and optical physics (Print). 2010, Vol 56, Num 3, pp 449-455, issn 1434-6060, 7 p.Article

Electromechanical single electron transistor in strong dissipative structureWANG, Y; JIANG, J. F; CAI, Q. Y et al.Physica. E, low-dimentional systems and nanostructures. 2005, Vol 30, Num 1-2, pp 59-63, issn 1386-9477, 5 p.Article

Charge transfer in 1-D HTS mesoscopic tunneling junction arraysTONG, M. Z; JIANG, J. F; CAI, Q. Y et al.IEEE transactions on applied superconductivity. 1999, Vol 9, Num 2, pp 4269-4272, issn 1051-8223, 3Conference Paper

Above-threshold ionization photoelectron spectrum from quantum trajectoryLAI, X. Y; CAI, Q. Y; ZHAN, M. S et al.The European physical journal. D, Atomic, molecular and optical physics (Print). 2009, Vol 53, Num 3, pp 393-396, issn 1434-6060, 4 p.Article

The principle of a high-temperature superconductor three-dimensional nanoelectron system for a bistable or four-stable stateHU, C. H; JIANG, J. F; CAI, Q. Y et al.Superconductor science & technology (Print). 2002, Vol 15, Num 3, pp 330-333, issn 0953-2048Article

Manual versus electric vacuum aspiration for first-trimester abortion : a systematic reviewWEN, J; CAI, Q. Y; DENG, F et al.BJOG (Oxford. Print). 2008, Vol 115, Num 1, pp 5-13, issn 1470-0328, 9 p.Article

A High Temperature Superconductor latchHU, C. H; JIANG, J. F; CAI, Q. Y et al.IEEE transactions on applied superconductivity. 2003, Vol 13, Num 2, pp 1060-1062, issn 1051-8223, 3 p., 1Conference Paper

The fine structures in I-V curves of single-electron transistor made by double unit cells of Bi₂Sr₂CaCu₂O₈GUO, J; JIANG, J. F; CAI, Q. Y et al.Physica. C. Superconductivity and its applications. 2000, Vol 341-48, pp 1603-1604, 3Conference Paper

Preliminary exploration of nanoscale titanium dots using STMTONG, M. Z; JIANG, J. F; HUANG, P et al.Molecular crystals and liquid crystals science and technology. Section A, Molecular crystals and liquid crystals. 1999, Vol 337, pp 297-300, issn 1058-725XConference Paper

Accumulation of phthalic acid esters in water spinach (Ipomoea aquatica) and in paddy soilCAI, Q. Y; MO, C.-H; WU, Q. T et al.Bulletin of environmental contamination and toxicology. 2006, Vol 77, Num 3, pp 411-418, issn 0007-4861, 8 p.Article

Simulation of circuits composed of HTSC-single hole transistors by using superconducting SET-SPICESHEN, B; JIANG, J. F; CAI, Q. Y et al.Physica. C. Superconductivity and its applications. 2000, Vol 341-48, pp 1605-1606, 3Conference Paper

Superconductor based neuron single electron transistorJIANG, J. F; CAI, Q. Y; CHENG, Z. C et al.Physica. C. Superconductivity and its applications. 2000, Vol 341-48, pp 1607-1608, 3Conference Paper

The capacitor and the mesoscopic tunnel junction in series coupled superconducting single electron transistorCAI, Q. Y; JIANG, J. F; TONG, M. Z et al.Physica. C. Superconductivity and its applications. 2000, Vol 341-48, pp 1609-1610, 3Conference Paper

The tunneling conductance inside the unit cell of Bi₂Sr₂CaCu₂O₈GUO, J; JIANG, J. F; CAI, Q. Y et al.Physica. C. Superconductivity and its applications. 2000, Vol 341-48, pp 1551-1554, 3Conference Paper

Morphology study of (100) single crystal diamond films epitaxially grown by chemical vapor depositionZHANG, Z. M; CHENG, H. M; LI, S. H et al.Journal of crystal growth. 1993, Vol 132, Num 1-2, pp 200-204, issn 0022-0248Article

Study of the zinc electroplating process using electrochemical noise techniqueZHANG, Z; LENG, W. H; CAI, Q. Y et al.Journal of electroanalytical chemistry (1992). 2005, Vol 578, Num 2, pp 357-367, issn 1572-6657, 11 p.Article

The active loads based on capacitively coupled HTSC-single hole transistorSHEN, B; JIANG, J. F; CAI, Q. Y et al.IEEE transactions on applied superconductivity. 1999, Vol 9, Num 2, pp 4273-4276, issn 1051-8223, 3Conference Paper